www.siliconstandard.com 1 of 4 SSM9435K re v . 1 . 01 5/25/2004 p-channel enhancement-mode power mosfet simple d rive r equirement bv dss -30v low o n-resistance r ds(on) 50m w fast s witching i d -6a description absolute maximum ratings symbol units v ds v v gs v i d @ t a =2 5 c i d @ t a =7 0 c i dm a p d @ t a =2 5 c w/ c t stg t j symbol value unit rthj-amb thermal resistance junction-ambient 3 max. 45 c /w thermal data parameter total power dissipation 2.7 w -55 to 150 c operating junction temperature range -55 to 150 c linear derating factor 0.02 storage temperature range continuous drain current 3 -4.8 a pulsed drain current 1 -20 parameter drain-source voltage gate-source voltage continuous drain current 3 rating -30 -6 a 25 advanced power mosfets from s ilico n standard provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. g d s d d s g sot-223
www.siliconstandard.com 2 of 4 ssm 9 435 k re v . 1 . 01 5 / 2 5 /2004 electrical characteristics @ t j =2 5 o c (unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v d b v dss / d t j breakdown voltage temperature coefficient reference to 25 c , i d =-1ma - -0.02 - v / c r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-5.3a - - 50 m w v gs =-4.5v, i d =-4.2a - - 100 m w v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-5.3a - 10 - s i dss drain-source leakage current (t j =25 o c) v ds =-30v, v gs =0v - - -1 ua drain-source leakage current (t j =70 o c) v ds =-24v, v gs =0v - - -25 ua i gss gate-source leakage v gs =-- na q g total gate charge 2 i d =-5.3a - 9.2 16 nc q gs gate-source charge v ds =-24v - 2.8 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 5.2 - nc t d(on) turn-on delay time 2 v ds =-15v - 11 - ns t r rise time i d =-1a - 8 - ns t d(off) turn-off delay time r g =6 w , v g s =-10v - 2 5 - ns t f fall time r d =15 w -1 7- ns c iss input capacitance v gs =0v - 507 912 pf c oss output capacitance v ds =-15v - 222 - pf c rss reverse transfer capacitance f=1.0mhz - 158 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-2.3a, v gs =0v - - -1.2 v t rr reverse recovery time i s =-5.3a, v gs =0 v , - 29 - ns qrr reverse recovery charge di/dt=100a/s - 20 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. 3.surface mounted on 1 in 2 copper pad of fr4 board ; 120 c /w when mounted on min. copper pad. 25v 100
www.siliconstandard.com 3 of 4 ssm 9 435 k re v . 1 . 01 5 / 2 5 /2004 fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance vs. gate voltage fig 4. normalized on-resistance vs. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage vs. reverse diode junction temperature 0 5 10 15 20 25 30 012345 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -10v -8.0v -6.0v -5.0v v g =-4.0v 0 5 10 15 20 25 30 01234567 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =150 o c -10v -8.0v -6.0v -5.0v v g =-4.0v 0.01 0.10 1.00 10.00 100.00 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0 1 2 3 4 -50 0 50 100 150 t j , junction temperature ( o c) v gs(th) (v) 30 40 50 60 70 80 90 100 110 345678910 11 -v gs , gate-to-source voltage (v) r ds(on) (m w ) i d =5.3a t a =25c 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) v g =10v i d =-5.3a
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